Hole(5)
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Circuit process (1)
Let's learn about the PCB circuit fabrication process. Types of Circuit Implementation Processes There are two types of circuit implementation processes: Tenting method and SAP method. Tenting Method: A process where unnecessary copper is etched away, leaving only the required copper for the desired circuit design to form. The detailed process is as follows: Via hole processing Non-electrolytic ..
2023.10.23 -
Drilling process (5)
Today, we will learn about the types of defects in CNC drilling and the CO2 laser process for implementing via holes. Defect Types in Drill Process Drill Eccentricity Cause: Board flex abnormality / Run-out, equipment misalignment / Foreign particles on board surface Defect Effect: Inner-layer short / Outer-layer open / Reliability issues Odd Drill Cause: Drill calibration misalignment / Stackin..
2023.10.16 -
Drilling process (4)
Types of Drilling Processes Single Pass Drill: The conventional method of drilling holes in PCBs where a bit passes through the PCB once to create a hole. Step Drill: A method to minimize bit breakage, where initially about 1/2 or 1/3 of the PCB is drilled and then the remaining portion is drilled to create the hole. Mainly used for thicker products. Double Drill: A method to enhance bit durabil..
2023.10.12 -
Drilling process (1)
Today, we will learn about the substrate drilling process. Drilling Process: This process involves machining PTH (Plating Through Hole) for interlayer circuit connection and NPTH (Non Plating Through Hole) for reference points and fixture assembly on the stacked panels. Purpose: Machining reference points for the product after lamination. Creating holes for interlayer electrical connections. Mac..
2023.10.02 -
반도체 8대 공정 - Doping 공정 (9)
지난 시간에 동일한 공간에 실리콘과 동일한 원자 수의 Si-Ge가 이종성장될 경우 부피 팽창으로 인해 주변에서는 압축 응력(compressive stress)을 받게 된다는 내용까지 알아보았습니다. 이어서 알아보도록 하겠습니다. 소스와 드레인 영역의 실리콘을 에치 공정으로 일부분 제거하고 그 공간에 Si-Ge을 에피성장한다면 소스 드레인 영역의 부피 팽창으로 인해 게이트 아래의 채널 영역은 양쪽에서 미는 힘을 받게 됩니다. 먼저, 원하는 영역만 선택적으로 에피성장을 시키는 방법을 SEG(Selective Epitaxial Growth)라고 합니다. 실리콘이 있는 소스와 드레인 영역을 에치로 파내고 에피 공정이 진행되면, 먼저 수소 분위기에서 열공정을 진행하여 Si이 에치된 영역에 자연산화막 및 이물질을 ..
2023.06.22