In the previous session, we learned about various types of substrates. In this session, we will start by exploring substrate terminology and then delve into SiP (System in Package) substrates in detail. PKG (Package) PKG is a technology that electrically connects semiconductor chips (Die) to a substrate and protects circuits from external impact. It is categorized based on the number of chips an..

"Mag" stands for magnification and zoom. Moving to the desired position can be done by clicking the mouse wheel. A higher scan speed reduces noise but results in slower image output. Lower speeds generate more noise but produce faster images. The STG incident angle refers to the angle at which the electron beam is incident. This button is usually not adjusted. Pressing the "auto" button adjusts ..

Operating Instructions for Scanning Electron Microscope (SEM), Part 3 Continuing from Part 2 of the SEM user manual, today we will delve into the actual imaging techniques. Rather than focusing on the sequence, let's concentrate on the meanings of each button. 3. Actual Imaging Once the vacuum state is achieved, the "beam on" indicator will light up, and you can proceed with the actual imaging. ..

2. Creating Vacuum in SEM Once you have completed these two steps, you are ready to place the object into the SEM machine. Open the SEM machine, place the object inside, and ensure that the door is securely closed to establish a proper vacuum. Next, press the "pump" button to initiate the vacuum. However, if the vacuum is not properly established, there could be two potential causes: The door is..

Scanning Electron Microscope (SEM) is an electron microscope that uses an electron beam to obtain the surface of a specimen, and it has superior resolution compared to an optical microscope. Today, we will explore the usage of SEM, specifically focusing on the initial procedures. Process before inserting into SEM machine: I take SEM images of molded circuit boards. Since the molding itself is an..

지난 시간에는 이온 주입 방법이 실리콘 격자 구조에 손상을 주므로 후속 열처리(Annealing)를 하는 것까지 알아보겠습니다. 이번 시간에는 후속 열처리 후에도 남아있을 수 있는 단점에 대하여 알아보며 시작하겠습니다. 이온 주입 공정은 고에너지 이온이 실리콘 격자와의 충돌에 의한 손상이 열처리(Anneal) 후에도 Dislocation 등 결함으로 남아 있을 수 있고 이 경우 p-n 접합 누설 전류가 증가합니다. 따라서 이온 주입 공정 후 적절한 열처리 공정은 매우 중요합니다. 보통 저온(500~600도)에서 이온 주입에 의해 비정질화된 실리콘이 재결정화되면서 결함이 제거되지만 활성화를 위해서는 고온(750~900도)에서 긴 시간(>30분) 동안 열처리를 하게 됩니다. 그러나 이 경우 소스/드레인 접합..